Climate Change

Climate change: New technology solution that could help solve the crisis

IIT Guwahati develops new technology in partnership with NTPC New Delhi, April 15: In a development that could help combat climate change significantly, a team of researchers at the Indian Institute of Technology (IIT) – Guwahati, in partnership with the National Thermal Power Corporation (NTPC) Limited, has designed and developed a technology that promises to help capture carbon dioxide emissions from power plants. The technology has been found to consume about 11 per cent less energy compared to existing commercial methods.  The new development assumes importance since, even while growth in the electricity sector is a prerequisite to achieving India’s goal of ‘Electricity for All’ and maintaining significant growth in its Gross Domestic Product (GDP), there is a need to reduce carbon dioxide emissions from power plants. The new technology is expected to help achieve both the goals simultaneously and effectively. Prof. Bishnupada Mandal of the Department of Chemical Engineering, IIT Guwahati, who led the research team, noted that several proprietary solvent-based technologies are available for CO2 capture in the chemical industry and utilized in coal and gas-fired power plants mainly to produce food-grade CO2 in small quantities. The processes involved are energy-intensive if adopted for large-scale CO2 capture in power plants. The new technology will help. The project, he added, will benefit oil, natural gas, biogas industries, and petroleum refineries. It could help save a lot of foreign exchange for the nation. After successfully completing test studies, the pilot plant has been shifted to NTPC’s NETRA (NTPC Energy Technology Research Alliance) facility. IIT-Guwahati and NTPC Limited are in the process of patenting the technology. The next phase of the study will involve testing pilot-pant using industrial flue gas.    (India Science Wire) Researchers develop smart materials for climate control of buildings 25 May 2021 New algorithm for safer digital data 6 September 2020 IIT Guwahati discovers new ways to prevent memory loss due to Alzheimer’s disease 20 May 2020 Technology to improve the life of thermal power plant boilers 9 October 2021 A new water repellent material for improved wearable motion sensors 29 September 2021 Topics:  climate change, IIT, NTPC,…

Research News

New device to help reduce frequent charging of wireless electronic gadgets

New Delhi, July 30th 2021: As we are moving toward a data-driven age, there is a need for faster and very low power computing. Memories play a crucial role in this, as for faster processing of data; the CPU rapidly reads and writes on the memory. A researcher at the Indian Institute of Technology (IIT) Delhi has designed a device for high-density magnetic memory, in collaboration with the National University of Singapore (NUS). The proposed device may help reduce frequent charging of wireless electronic devices such as mobile phones and other Internet of Thing (IoT) based devices. The main memory, i.e., the Random-access memory (RAM) is most commonly used in modern computer architecture. These are SRAMs and DRAMs, which are based on CMOS technology. They are fast but volatile and require a constant supply of power, which consumes lots of energy. But, if these could be made non-volatile, then computing could be made more energy-efficient. Spintronics memories like spin-transfer torque magneto-resistive RAM (STT-MRAM) and spin-orbit torque magneto-resistive RAM (SOT-MRAM) are inherently non-volatile. They consume no power at standby. Also, their operation speeds are comparable to RAMs. Hence, these spintronics memories are the most potential candidates for replacing current electronic RAMs, says IIT Delhi statement. SOT-MRAMs are better than STT-MRAM in terms of reliability and writing speed but lags in achieving high integration density. This is because, unlike STT-MRAM, which is a two-terminal device and needs one transistor for reading and writing operation, the SOT-MRAMs require two transistors each for reading and writing. Thus SOT-MRAM requires a larger area per bit as compared to STT-MRAM. Also, SOT-MRAM is less prone to breakdown due to separate read and write paths, this is absent in STT-MRAMs. Hence, SOT-MRAM is the preferred choice among the research community however significant work is required to increase their areal density. In a collaborative work between Prof. Rahul Mishra from the Centre for Applied Research in Electronics (CARE), IIT Delhi, and Prof. Hyunsoo Yang from the National University of Singapore (NUS) a possible solution for achieving higher integration density in SOT-MRAMs was proposed and experimentally demonstrated. Prof. Rahul…

Vidya Bhushan Rawat at deekshabhoomi

Policing political ideas will fail

The power today does not want the new young to think and speak. They don’t want you to debate and discuss the politics, the issues confronting our society and nation.